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W949D6CB / W949D2CB
512Mb Mobile LPDDR
7.6.10 Interrupting Write to Read
Data for any Write burst may be truncated by a subsequent READ command as shown in the figure below. Note that
the only data-in pairs that are registered prior to the t WTR period are written to the internal array, and any subsequent
data-in must be masked with DM.
CK
CK
Command
WRITE
NOP
NOP
READ
NOP
NOP
NOP
Address
BA,Col b
t DQSSmax
BA,Col n
t WTR
BA,Col n
CL=3
DQS
DQ
DM
DI b
DO n
1) Dl b = Data in to column b. DO n=Data out from column n.
2) An interrupted burst of 4 is shown, 2 data elements are written.
= Don't Care
3 subsequent elements of Data In are applied in the programmed order following DI b.
3) t WTR is referenced from the positive clock edge after the last Data In pair.
4)A10 is LOW with the WRITE command (Auto Precharge is disabled)
5) The READ and WRITE commands are to the same device but not necessarily to the same bank.
7.6.11 Write to Precharge
Data for any WRITE burst may be followed by a subsequent PRECHARGE command to the same bank (provided
Auto Precharge was not activated). To follow a WRITE without truncating the WRITE burst, t WR should be met as
shown in the figure below.
7.6.12 Non-Interrupting Write to Precharge
CK
CK
Command
WRITE
NOP
NOP
NOP
NOP
PRE
Address
BA,Col b
t DQSSmax
BA,Col n
t WR
BA a (or all)
DQS
DQ
DM
1) Dl b = Data in to column b
DI b
= Don't Care
3 subsequent elements of Data In are applied in the programmed order following DI b.
2) A non-interrupted burst of 4 is shown.
3) t WR is referenced from the positive clock edge after the last Data In pair.
4) A10 is LOW with the WRITE command (Auto Precharge is disabled)
Publication Release Date: Sep, 21, 2011
- 38 -
Revision A01-007
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